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| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA505T N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) The PA505T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +0.1 -0.05 +0.1 1.5 0.65 -0.15 0.16 +0.1 -0.06 FEATURES * Two source common MOS FET circuits in package the same size as SC-59 * Complementary MOS FETs are provided in one package. * Automatic mounting supported 2.8 0.2 0 to 0.1 0.95 0.95 0.8 1.1 to 1.4 1.9 2.9 0.2 PIN CONNECTION (Top View) Marking: FA ABSOLUTE MAXIMUM RATINGS (TA = 25 C) PARAMETER Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Total Power Dissipation Channel Temperature Storage Temperature SYMBOL VDSS VGSS ID(DC) ID(pulse)* PT Tch Tstg RATINGS 50/-50 - 20/+16 - 100/+100 - 200/+200 300 (TOTAL) 150 -55 to +150 UNIT V V mA mA mW C C * PW 10 ms, Duty Cycle 50 % Note The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively. Document No. G11241EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 PA505T ELECTRICAL CHARACTERISTICS (TA = 25 C) PARAMETER Drain Cut-off Current SYMBOL IDSS TEST CONDITIONS VDS = 50/-50 V, VGS = 0 MIN. - TYP. - MAX. 1.0 -1.0 Gate Leakage Current IGSS - VGS = 20/+16 V, VDS = 0 - - 1.0 - +10 Gate Cut-off Voltage VGS(off) VDS = 5.0/-5.0 V, ID = 1/-1 A 0.8 -1.5 Forward Transfer Admittance |yfs| VDS = 5.0/-5.0 V, ID = 10/-10 mA 20 15 Drain to Source On-State Resistance RDS(on)1 VGS = 4/-4 V, ID = 10/-10 mA - 19 60 Drain to Source On-State Resistance RDS(on)2 VGS = 10/-10 V, ID = 10/-10 mA - 15 40 Input Capacitance Ciss VDS = 5.0/-5.0 V VGS = 0, f = 1.0 MHz Output Capacitance Coss - 12 4 Reverse Transfer Capacitance Crss - 3 4 Turn-On Delay Time td(on) VDD = 5.0/-5.0 V, ID = 10/-10 mA VGS(on) = 5.0/-5.0 V Rise Time tr RG = 10 , RL = 500 - 10 40 Turn-Off Delay Time td(off) - 68 100 Fall Time tf - 38 80 - ns - ns - 17 40 - ns - ns - pF - 16 10 - pF - 25 60 pF 30 100 1.4 -1.9 - 1.8 -2.5 - mS V UNIT A A Marking: FA Note The left and right values in above table represent the N-ch and P-ch characteristics, respectively. 2 PA505T SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS (RESISTANCE LOADED) * N-ch part DUT RL Gate Voltage Waveform VGS 0 10 % VGS(on) 90 % VDD RG PG. Drain Current Waveform 0 10 % ID 90 % 90 % ID 10 % VGS 0 = 1 s Duty Cycle 1 % td(on) ton tr td(off) toff tf * P-ch part VGS DUT RL Gate Voltage Waveform ID td(on) Drain Current Waveform 0 VGS = 1 s Duty Cycle 1 % tr td(off) tf 10 % VGS(on) 90 % VDD RG PG. 0 10 % ID 10 % 90 % 90 % 3 PA505T TYPICAL CHARACTERISTICS (TA = 25 C) * N-ch part DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 350 Free air PT - Total Power Dissipation - mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 dT - Derating Factor - % 300 250 200 150 100 50 Pe TO TA 80 60 40 20 L ro ne un it 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 120 Pulsed measurement 100 ID - Drain Current - mA TA - Ambient Temperature - C TRANSFER CHARACTERISTICS 1000 VDS = 5 V Pulsed measurement 4.0 V ID - Drain Current - mA 3.5 V 80 60 3.0 V 40 20 VGS = 2.5 V 100 10 TA = 75 C 1 25 C -25 C 0.1 0 1 2 3 4 5 6 7 0 2 4 6 8 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3 |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 VDS = 5 V VDS = 5 V ID = 1.0 A 2 TA = 75 C 25 C 10 -25 C 1 0 -30 0 30 60 90 120 150 1 1 10 100 1000 ID - Drain Current - mA Tch - Channel Temperature - C 4 PA505T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 50 ID = 10 mA Pulsed measurement RDS(on) - Drain to Source On-State Resistance - 1000 500 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = 10 V Pulsed measurement RDS(on) - Drain to Source On-State Resistance - 10 5 100 50 TA = 75 C 25 C -25 C 10 10 50 100 500 1000 1 1 5 10 50 100 VGS - Gate to Source Voltage - V ID - Drain Current - mA RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 30 VGS = 10 V Pulsed measurement 100 Ciss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss 10 Coss Crss 20 10 1 0 -30 0 30 60 90 120 150 VGS = 0 f = 1 MHz 0.1 0.1 1 10 100 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 SWITCHING CHARACTERISTICS 100 td(on), tr, td(off), tf - Switching Time - ns td(off) 50 tf ISD - Source to Drain Current - mA 100 10 tr 20 td(on) VDD = 5 V VGS = 5 V RG = 10 20 50 ID - Drain Current - mA 1 10 10 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD - Source to Drain Voltage - V 5 PA505T * P-ch part DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 350 Free air PT - Total Power Dissipation - mW 100 dT - Derating Factor - % 80 60 40 20 300 250 200 150 100 50 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TO TA Pe L ro ne un it 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 150 TC - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE -120 -100 ID - Drain Current - mA -80 -60 -40 -20 -0.01 0 -2 -4 -6 -8 -10 -12 -14 -0.001 0 VGS = -4 V -100 -10 V Pulsed measurement -8 V -6 V -10 ID - Drain Current - mA TA - Ambient Temperature - C TRANSFER CHARACTERISTICS -1 TA = 150 C 75 C 25 C -25 C -0.1 VDS - Drain to Source Voltage - V VDS = -5.0 V Pulsed measurement -5 -10 -15 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE -2.4 -2.2 -2.0 -1.8 -1.6 -1.4 -1.2 -30 |yfs| - Forward Transfer Admittance - mS VGS(off) - Gate Cut-off Voltage - V VDS = -5.0 V ID = -1 A 100 VDS = -5.0 V 50 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 20 10 5 TA = -25 C 25 C 75 C 150 C 2 1 -1 0 30 60 90 120 150 -2 -5 -10 -20 -50 -100 Tch - Channel Temperature - C ID - Drain Current - mA 6 PA505T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-State Resistance - RDS(on) - Drain to Source On-State Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 VGS = -4 V Pulsed measurement TA = 150 C 100 ID = -1 mA Pulsed measurement 100 ID = -10 mA 50 75 C 25 C 50 -25 C 0 -4 -8 -12 -16 -20 0 -1 -2 -5 -10 -20 -50 -100 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 VGS = -4 V ID = -10 mA 120 100 80 60 40 20 -30 Ciss, Coss, Crss - Capacitance - pF ID - Drain Current - mA CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 50 20 10 5 2 1 0.5 0.2 Crss Coss VGS = 0 f = 1 MHz RDS(on) - Drain to Source On-State Resistance - Ciss 0 30 60 90 120 150 Tch - Channel Temperature - C 0.1 0.1 -1 -2 -5 -10 -20 -50 -100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 500 td(on), tr, td(off), tf - Switching Time - ns SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 100 50 td(on) tr 20 10 5 -5 ISD - Source to Drain Current - mA 200 tf VDD = -5.0 V VGS = -4 V RG = 10 10 1 td(off) -10 -20 -50 -100 -200 -500 ID - Drain Current - mA 0.1 0.5 0.6 0.7 0.8 0.9 1 VSD - Source to Drain Voltage - V 7 PA505T REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 C10535E MEI-1202 X10679E 8 PA505T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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